MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA92/D
High Voltage Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSA92*
MPSA93
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA92
–300
–300
–5.0
–500
625
5.0
1.5
12
– 55 to +150
MPSA93
–200
–200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
(VCB = –160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPSA92
MPSA93
IEBO
V(BR)CEO
MPSA92
MPSA93
V(BR)CBO
MPSA92
MPSA93
V(BR)EBO
ICBO
—
—
—
–0.25
–0.25
–0.1
µAdc
–300
–200
–5.0
—
—
—
Vdc
µAdc
–300
–200
—
—
Vdc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1998
1
ONSEMI [ ON SEMICONDUCTOR ]
