NTD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
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V
(BR)DSS
−60 V
R
DS(on)
TYP
155 mW @ −10 V, 6 A
I
D
MAX
−12 A
•
Avalanche Energy Specified
•
I
DSS
and V
DS(on)
Specified at Elevated Temperature
•
Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
10 ms)
Drain Current
Drain Current
− Continuous @ T
a
= 25°C
Drain Current
− Single Pulse (t
p
≤
10 ms)
Total Power Dissipation @ T
a
= 25°C
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 3.0 mH, R
G
= 25
W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
−60
±
20
±
25
−12
−36
55
−55 to
175
216
Unit
Vdc
Vdc
Vpk
Adc
Apk
W
°C
mJ
1 2
3
G
P−Channel
D
S
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
AYW
NT2955
2
1
3
Drain
Gate
Source
4
Drain
AYW
NT2955
1 2 3
Gate Drain Source
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
= Work Week
4
R
qJC
R
qJA
R
qJA
T
L
2.73
71.4
100
260
°C/W
4
DPAK−3
CASE 369D
STYLE 2
1
2
°C
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in
2
).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 7
Publication Order Number:
NTD2955/D
ONSEMI [ ON SEMICONDUCTOR ]
