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P6SMB82CAT3G 参数 Datasheet PDF下载

P6SMB82CAT3G图片预览
型号: P6SMB82CAT3G
PDF下载: 下载PDF文件 查看货源
内容描述: 600瓦峰值功率齐纳瞬态电压抑制器 [600 Watt Peak Power Zener Transient Voltage Suppressors]
分类和应用: 二极管光电二极管
文件页数/大小: 6 页 / 71 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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P6SMB11CAT3 Series
600 Watt Peak Power Zener
Transient Voltage Suppressors
Bidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Features
http://onsemi.com
Working Peak Reverse Voltage Range − 9.4 to 77.8 V
Standard Zener Breakdown Voltage Range − 11 to 91 V
Peak Power − 600 W @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
9.4−78 VOLTS
600 WATT PEAK POWER
SMB
CASE 403A
PLASTIC
Mechanical Characteristics:
CASE:
Void-Free, Transfer-Molded, Thermosetting Plastic
FINISH:
All External Surfaces are Corrosion Resistant and Leads are
MARKING DIAGRAM
Readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS:
Modified L−Bend Providing More Contact Area to Bond Pads
POLARITY:
Polarity Band Will Not be Indicated
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25°C,
Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance, Junction−to−Ambient
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
−65 to
+150
Unit
W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
AYWW
xxC
G
G
xxC = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
P6SMBxxCAT3
P6SMBxxCAT3G
Package
SMB
SMB
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 10 X 1000
ms,
non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.
©
Semiconductor Components Industries, LLC, 2006
The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
1
July, 2006 − Rev. 8
Publication Order Number:
P6SMB11CAT3/D