1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
T
J
, T
stg
Value
400
1.5
20
50
0.5
4.0
250
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
I
PP
I
T
V
C
V
BR
V
RWM
I
R
I
R
V
RWM
V
BR
V
C
I
T
V
I
PP
I
Bi−Directional TVS
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