TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
10
IC, COLLECTOR CURRENT (AMPS)
4.0
1 ms
2.0
1.0
5 ms
T
J
= 150°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
0.1
1.0
TIP115
TIP116
TIP117
IC, COLLECTOR CURRENT (AMPS)
10
4.0
2.0
1.0
T
J
= 150°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
0.1
1.0
TIP110
TIP111
TIP112
10
40 60 80 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
60 80 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. TIP115, 116, 117
Figure 6. TIP110, 111, 112
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
T
C
= 25°C
C, CAPACITANCE (pF)
100
70
50
C
ob
30
20
PNP
NPN
10
0.04 0.06 0.1
0.2 0.4 0.6 1.0
2.0 4.0 6.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
C
ib
Figure 7. Capacitance
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