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TIP137 参数 Datasheet PDF下载

TIP137图片预览
型号: TIP137
PDF下载: 下载PDF文件 查看货源
内容描述: 达林顿互补硅功率晶体管 [Darlington Complementary Silicon Power Transistors]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 4 页 / 61 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号TIP137的Datasheet PDF文件第2页浏览型号TIP137的Datasheet PDF文件第3页浏览型号TIP137的Datasheet PDF文件第4页  
TIP131, TIP132 (NPN),
TIP137 (PNP)
Preferred Devices
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
http://onsemi.com
High DC Current Gain −
h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 30 mAdc
V
CEO(sus)
= 80 Vdc (Min) − TIP131
= 100 Vdc (Min) − TIP132, TIP137
Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc
= 3.0 Vdc (Max) @ I
C
= 6.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 70 WATTS
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
TIP131
80
80
TIP132
TIP137
100
100
TO−220AB
CASE 221A
STYLE 1
1
2
3
Î Î
Î
Î Î
ÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
Î ÎÎ
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Î Î
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Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Unit
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
5.0
8.0
12
70
Collector Current − Continuous
Peak
Base Current
300
2.0
mAdc
W
W
Total Power Dissipation @ T
C
= 25_C
Total Power Dissipation @ T
A
= 25_C
Operating and Storage Junction,
Temperature Range
P
D
P
D
T
J
, T
stg
– 65 to + 150
_C
TIP13xG
AYWW
TIP13x
x
A
Y
WW
G
= Device Code
= 1, 2, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
TIP131
TIP131G
TIP132
TIP132G
TIP137
TIP137G
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
R
qJA
Max
Unit
1.78
63.5
_C/W
_C/W
Thermal Resistance,
Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 1
Publication Order Number:
TIP131/D