HE8812SG
GaAlAs Infrared Emitting Diode
Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as
the light source in a wide range of optical control and sensing equipment.
ODE-208-052 (Z)
Rev.0
Oct. 30, 2006
Features
•
High efficiency and high output power
Package Type
•
HE8812: SG1
Internal Circuit
1
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Forward current
Reverse voltage
Operating temperature
Storage temperature
I
F
V
R
Topr
Tstg
Symbol
Ratings
250
3
–20 to +60
–40 to +90
Unit
mA
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Optical output power
Peak wavelength
Spectral width
Forward voltage
Reverse current
Capacitance
Rise time
Fall time
Symbol
P
O
λp
∆λ
V
F
I
R
Ct
t
r
t
f
Min
40
840
—
—
—
—
—
—
Typ
—
870
50
—
—
30
10
10
Max
—
900
60
2.5
100
—
—
—
Unit
mW
nm
nm
V
µA
pF
ns
ns
Test Conditions
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
I
F
= 50 mA
Rev.0 Oct. 30, 2006 page 1 of 4
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