HL6316G
AlGaInP Laser Diodes
Description
The HL6316G is a 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as
light sources for laser pointers and optical equipment.
ODE-208-026 (Z)
Rev.0
Jul. 01, 2005
Features
•
•
•
•
•
•
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 3 mW CW
Low operating current: 30 mA Typ
Low operating voltage: 2.7 V Max
TM mode oscillation
Package Type
•
HL6316G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
3
5*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width
≤
1
µs
, duty
≤
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
—
—
—
6
23
630
0.1
Typ
25
30
—
8
30
635
0.3
Max
35
42
2.7
10
39
640
0.6
Unit
mA
mA
V
°
°
nm
mA
Test Conditions
—
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW
P
O
= 3 mW, V
R(PD)
= 5 V
Rev.0 Jul 01, 2005 page 1 of 4
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