HL6323MG
AlGaInP Laser Diodes
Description
The HL6323MG is a 0.63
µm
band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
ODE-208-029 (Z)
Rev.0
Jul. 01, 2005
Features
•
•
•
•
•
High output power
: 35 mW (CW)
Visible light output
:
λp
= 639 nm Typ
Small package
:
φ5.6
mm
TM mode oscillation
Single longitudinal mode
Pakage Type
•
HL6323MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
1
35 *
50 *
2
2
Unit
mW
mW
V
V
°C
°C
30
–10 to +50
Storage temperature
Tstg
–40 to +85
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Operating current
Operating voltage
Beam divergence parallel to
the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
ηs
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
30
0.4
7
26
635
0.05
Typ
45
0.6
95
2.3
8.5
30
639
0.15
Max
65
0.9
130
2.8
11
34
642
0.25
Unit
mA
mW/mA
mA
V
°
°
nm
mA
Test Condition
—
18(mW) / (I
(24mW)
– I
(6mW)
)
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW, V
R(PD)
= 5 V
Rev.0 Jul. 01, 2005 page 1 of 4
OPNEXT [ OPNEXT. INC. ]
