HL6335G/36G
Circular Beam Low Operating Current
Description
The HL6335/36G are 0.63
µm
band AlGaInP laser diodes can be operated with low operating current. These products
were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser
levelers, laser scanners and optical equipment for measurement.
ODE-208-034 (Z)
Rev.0
Jul. 01, 2005
Features
•
•
•
•
•
•
•
Optical output power : 5 mW CW
Single longitudinal mode
Visible light power
: 635 nm Typ
Low operating current : 25 mA Typ
Low aspect ratio
: 1.2 Typ
Operating temperature : +50°C
TM mode oscillation
Package Type
•
HL6335/36G: G2
Internal Circuit
•
HL6335G
1
3
Internal Circuit
•
HL6336G
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Symbol
Optical output power
P
O
Pulse optical output power
P
O(pulse)
LD reverse voltage
V
R(LD)
PD reverse voltage
V
R(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width
≤
1
µs
, duty
≤
50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
20
30
mA
—
Slope efficiency
ηs
0.5
0.8
1.1
mW/mA 3 (mW) / (I
(4mW)
– I
(1mW)
)
Operating current
I
OP
—
25
40
mA
P
O
= 5 mW
Operating voltage
V
OP
—
2.4
2.7
V
P
O
= 5 mW
Lasing wavelength
λp
630
635
640
nm
P
O
= 5 mW
Beam divergence
θ//
13
17
25
°
P
O
= 5 mW
parallel to the junction
Beam divergence
θ⊥
16
20
25
°
P
O
= 5 mW
perpendicular to the junction
Aspect ratio
θ⊥/θ//
—
1.2
1.5
—
P
O
= 5 mW
Monitor current
I
S
0.03
0.07
0.12
mA
P
O
= 5 mW, V
R(PD)
= 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.0 Jul. 01, 2005 page 1 of 5
OPNEXT [ OPNEXT. INC. ]
