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HL6362MG 参数 Datasheet PDF下载

HL6362MG图片预览
型号: HL6362MG
PDF下载: 下载PDF文件 查看货源
内容描述: 低工作电流可视激光二极管 [Low Operating Current Visible Laser Diode]
分类和应用: 光电二极管激光二极管
文件页数/大小: 5 页 / 102 K
品牌: OPNEXT [ OPNEXT. INC. ]
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HL6362MG/63MG
Low Operating Current Visible Laser Diode
Description
The HL6362MG/63MG are 0.63
µm
band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser display, laser scanners and optical equipment for measurement.
ODE-208-011E (Z)
Rev.5
Apr. 14, 2006
Features
Visible light output
: 640 nm Typ
Single longitudinal mode
Optical output power : 40 mW CW
Low operating current : 90 mA Typ
Low operating voltage : 2.6 V Max
Operating temperature : +50°C
TE mode oscillation
Package Type
HL6362MG/63MG: MG
Internal Circuit
HL6362MG
1
3
Internal Circuit
HL6363MG
1
3
PD
LD
PD
LD
2
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
45
2
30
–10 to +50
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
7
16
0.15
Typ
45
90
2.4
10
21
640
0.30
Max
60
110
2.6
13
24
643
0.60
Unit
mA
mA
V
°
°
nm
mA
Test Condition
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW
P
O
= 40 mW ,V
R(PD)
= 5 V
Rev.5 Apr. 14, 2006 page 1 of 5