HL6740FG
Dual Beam Visible Laser Diode
Description
The HL6740FG is a 0.67
µm
band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is an array of
two individual beams on one chip. Therefore, it is suitable as a light source for a high-speed printer, such as PPC and
LBP, and so on.
ODE-208-024 (Z)
Rev.0
Feb. 24, 2006
Features
•
Continuous operating output to each beam: 5 mW CW
•
Visible light output: 675 nm Typ
•
Difference of wavelength between 2 beams
: 3 nm Max
•
Low threshold current: 35 mA Typ
Package Type
•
HL6740FG: FG
Internal Circuit
1
4
3
LD
B
PD
LD
A
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
5
6*
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width
≤
1
µs,
duty
≤
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
LD Operating current
LD Operating voltage
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Difference of wavelength
*
Monitor current
2
Symbol
Ith
I
OP
V
OP
ηs
θ//
θ⊥
λp
∆λp
Is
Min
—
—
—
0.2
6.5
20
665
—
1.0
Typ
35
—
2.3
0.4
8
30
675
—
—
Max
50
75
2.7
0.6
11
36
680
3.0
4.0
Unit
mA
mA
V
mW/mA
°
°
nm
nm
mA
Test Conditions
—
P
O
= 5 mW
P
O
= 5 mW
3 (mW) / (I
(4mW)
– I
(1mW)
)
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW
P
O
= 5 mW, V
R(RD)
= 5V
Notes: 1. The characteristics are specified under the condition of a single beam operation unless otherwise specified.
2.
∆λp
is specified as absolute value of the difference between two beams operated every beam.
Rev.0 Feb. 24, 2006 page 1 of 4
OPNEXT [ OPNEXT. INC. ]
