HL7851G
GaAlAs Laser Diode
Description
The HL7851G is a high-power 0.78
µm
band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
ODE-208-062A (Z)
Rev.1
Dec. 04, 2006
Features
•
•
•
•
Visible light output:
λp
= 785 nm Typ
Small beam ellipticity: 9.5:23
High output power: 50 mW (CW)
Built-in monitor photodiode
Package Type
•
HL7851G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
50
60 *
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Maximum 50% duty cycle, maximum 1
µs
pulse width.
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
LD Operating current
LD Operating voltage
Lasing wavelength
Beam divergence (parallel)
Beam divergence
(perpendicular)
Monitor current
Astigmatism
Symbol
Ith
ηs
I
OP
V
OP
λp
θ//
θ⊥
I
S
A
S
Min
—
0.35
—
—
775
8
18
30
—
Typ
45
0.55
135
2.3
785
9.5
23
45
5
Max
70
0.7
165
2.7
795
12
28
150
—
Unit
mA
mW/mA
mA
V
nm
°
°
µA
µm
Test Conditions
40 (mW) / (I
(45mW)
– I
(5mW)
)
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW, FWHM
P
O
= 50 mW, FWHM
P
O
= 5 mW, V
R(PD)
= 5 V
P
O
= 5 mW, NA = 0.4
Rev.1 Dec. 04, 2006 page 1 of 4
OPNEXT [ OPNEXT. INC. ]
