HL8335MG
GaAIAs Laser Diode
Description
The HL8335MG is a high-power 0.8
µm
band GaAlAs laser diode with a TQW (triple quantum well) structure.
It is suitable as a light source for various types of optical equipment.
ODE-208-058B (Z)
Rev.2
Jun. 13, 2006
Features
•
Infrared light output:
λp
= 840 to 860 nm
•
High Power: standard continuous operation at
40mW (CW), pulsed operation at 50mW
•
Built-in monitor photodiode
•
Single longitudinal mode
Package Type
•
HL8335MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width
≤
1
µs
, duty
≤
50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Operating current
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
ηs
I
OP
θ//
θ⊥
λp
I
S
Min
—
0.4
—
7
18
840
0.08
Typ
40
0.5
120
10
22
850
0.2
Max
70
0.9
160
14
32
860
0.40
Unit
mA
mW/mA
mA
°
°
nm
mA
Test Conditions
—
24(mW) / (I
(32mW)
– I
(8mW)
)
P
O
= 40 mW
P
O
= 40 mW, FWHM
P
O
= 40 mW, FWHM
P
O
= 40 mW
P
O
= 40 mW, V
R(PD)
= 5 V
Rev.2 Jun. 13, 2006 page 1 of 4
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