HL8340MG
GaAlAs Laser Diode
Description
The HL8340MG is 0.85
µm
band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a
light source for sensor applications and various other types of optical equipment.
ODE-208-067A (Z)
Rev.1
May 24, 2007
Features
•
•
•
•
•
•
Infrared light output:
λp
= 852 nm Typ
Optical output power: 50 mW (CW)
Low operating current: 75 mA Typ
Low operating voltage: 1.9 V Typ
Built-in monitor photodiode
Single longitudinal mode
Package Type
•
HL8340MG: MG
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Ratings
50
2
30
–10 to +60
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Symbol
Ith
ηs
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
—
0.7
—
—
6
18
842
—
Typ
20
0.9
75
1.9
9
22
852
0.25
Max
40
—
100
2.0
12
26
862
—
Unit
mA
mW/mA
mA
V
°
°
nm
mA
Test Conditions
—
30 (mW)/(I
(40mW)
– I
(10mW)
)
P
O
= 50 mW
P
O
= 50 mW
P
O
= 50 mW, FWHM
P
O
= 50 mW, FWHM
P
O
= 50 mW
P
O
= 50 mW, V
R(PD)
= 5 V
Rev.1 May 24, 2007 page 1 of 4
OPNEXT [ OPNEXT. INC. ]
