March 2003
AOP604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP604 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses.
Features
n-channel
p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A
-6.6A
R
DS(ON)
< 28mΩ
< 35mΩ (V
GS
= 10V)
< 43mΩ
< 58mΩ (V
GS
= 4.5V)
Schottky
V
DS
=30V, I
F
=3A, V
F
<0.5V@1A
PDIP-8
S1/A
G1
S2
G2
1
2
3
4
8
7
6
5
D1/K
D1/K
D2
D2
D2
D1
K
N-ch
P-ch
G2
S2
G1
S1
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
V
DS
T
A
=25°C
I
D
I
DM
P
D
T
J
, T
STG
7.5
6
30
2.5
1.6
-55 to 150
W
°C
Units
V
A
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
A
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
T
A
=70°C
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
A
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
OPTEK [ OPTEK TECHNOLOGIES ]
