Product Bulletin OP234W
July 2001
PRELIMINARY
GaAlAs Hermetic Infrared Emitting Diodes
Type OP234W
Features
•
Very high speed
•
Enhanced temperature range
•
Wide irradiance pattern
•
Mechanically and spectrally matched
to the OP800WSL and OP830SL
series devices
•
Significantly higher power output than
GaAs at equivalent drive currents
•
TO-46 hermetically sealed package
•
Case is electrically connected to the
cathode
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Forward Current (2
µs
pulse width, 0.1% duty cycle) . . . . . . . . . . . . . . . . 10.0 A
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
soldering.
(2) Derate linearly 2.0 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average radiant intensity emitted by the IRED within a cone
formed from the IRED chip to an aperture. The aperture of diameter 0.250” is located a
distance of 0.466”from the flange (measurement plane) to the aperture plane (parallel to the
measurement plane) along the optical and mechanical axis. The cone formed is a 30°cone.
The radiant intensity is not necessarily uniform within the measured area.
(4) Measurement made with 100µs pulse measured at the trailing edge of the pulse with a duty
cycle of 0.1% and an I
F
= 100 mA.
Description
The OP234W device is an 850 nm
gallium aluminum arsenide infrared
emitting diodes mounted in hermetically
sealed packages. The broad irradiance
pattern provides relatively even
illumination over a large area.
OPTEK [ OPTEK TECHNOLOGIES ]
