Product Bulletin OP235TX
September 1996
Hi-Reliability GaAlAs Infrared Emitting Diodes
Types OP235TX, OP235TXV, OP236TX, OP236TXV
Features
•
Twice the power output of GaAs at the
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
same drive current
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
•
Characterized to define infrared energy Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
o
o
along the mechanical axis of the
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C
device
Lead Soldering Temperature [1/16 inch (1.6mm) from case for 5 sec. with soldering
o (1)
•
Mechanically and spectrally matched
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 C
to the OP804TX/TXV and
(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
OP805TX/TXV phototransistors
Notes:
•
Screened per MIL-PRF-19500 TX or
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
TXV equivalent levels
soldering.
Description
The OP235TX, TXV and OP236TX, TXV
are high reliability gallium aluminum
arsenide infrared emitting diodes
mounted in hermetic TO-46 packages.
The wavelength is centered at 890
nanometers to closely match the spectral
response of silicon photoransistors.
Devices are processed to Optek’ 100%
s
screening and quality conformance
program patterned after MIL-PRF-19500.
After 100% screening, Group A and B are
performed on every lot, and a Group C
test is performed every six months.
The OP235TX, TXV and OP236TX, TXV
have lens cans providing a narrow beam
angle (18
o
between half power points).
The narrow beam angle and the specified
radiant intensity allow ease of design in
beam interrupt applications with the
OP804TX, TXV and OP805TX, TXV
series of high reliability phototransistors.
(2) Derate linearly 2.00 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average radiant intensity within the cone formed by the
measurement surface. The cone is outlined by a radius of 1.429 inches (36.30 mm)
measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250
inches (6.35 mm) in diameter forming a 10
o
cone. E
e(APT)
is not necessarily uniform within
the measured area.
Typical screening and lot acceptance tests are provided on page 13-4.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
13-28
(972) 323-2200
Fax (972) 323-2396
OPTEK [ OPTEK TECHNOLOGIES ]
