SMD Silicon Phototransistor
OP520, OP521
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
-40° C to +85° C
-25° C to +85° C
260° C
(1)
30 V
5V
20 mA
75 mW
(2)
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
SYMBOL
I
C(ON)
V
CE(SAT)
I
CEO
V
(BR)CEO
V
(BR)ECO
t
r
, t
f
3.
4.
PARAMETER
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Rise and Fall Times
MIN
0.25
TYP
MAX
UNITS
mA
CONDITIONS
V
CE
= 5.0V, E
e
= 5.0mW/cm
2 (3)
I
C
= 100µA, E
e
= 5.0mW/cm
2 (3)
V
CE
= 5.0V, E
e
= 0
(4)
I
C
= 100µA, E
e
= 0
I
E
= 100µA, E
e
= 0
I
C
= 1mA, R
L
= 1KΩ
0.4
100
30
5
15
V
nA
V
V
µs
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
(0.04Ta-3.4)
where Ta is the ambient temperature in ° C.
To Calculate typical collector dark current in µA, use the formula I
CEO
= 10
160%
140%
Relative On-State Collector
Current vs. Irradiance
Normalized at E
e
= 5mW/cm
2
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°C
Relative On-State Collector Current
vs. Temperature
140%
130%
Normalized at T
A
= 25°C .
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°C
80°C
Relative Collector Current
120%
100%
80%
60%
40%
20%
Relative Collector Current
120%
110%
100%
90%
80%
70%
-40°C
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-25
0
25
50
75
100
Ee—Irradiance (mW/cm
2
)
Temperature—(°C)
OPTEK [ OPTEK TECHNOLOGIES ]
