Product Bulletin OP905
June 1996
PIN Silicon Photodiode
Type OP905
Features
•
Narrow receiving angle
•
Linear response vs. irradiance
•
Fast switching time
•
T-1 package style
•
Small package ideal for space limited
applications
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4) To calculate typical dark current in nA, use the formula I
D
= 10
(0.042 TA-1.5)
where T
A
is
ambient temperature in
o
C.
Description
The OP905 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The narrow receiving angle
provides excellent on-axis coupling.
These devices are 100% production
tested using infrared light for close
correlation with Optek’ GaAs and
s
GaAlAs emitters.
Typical Performance Curves
Relative Response vs.
Wavelength
Coupling Characteristics
OP905 and OP265
V
R
= 5 V
I
F
= 20 mA
λ
- Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
3-52
Distance Between Lens Tips - inches
(972) 323-2200
Fax (972) 323-2396
OPTEK [ OPTEK TECHNOLOGIES ]
