Prod uct Bul le tin OP910
December 1998
PIN Silicon Photodiode
Type OP910
*THIS DIMENSION
CONTROLLED AT HOUSING SURFACE.
DIMENSIONS ARE IN INCHES (MILLIMETERS).
Features
•
•
•
•
Narrow receiving angle
Fast switching time
Linear response vs. irradiance
Enhanced temperature range
Ab so lute Maxi mum Rat ings
(T
A
= 25
o
C un less oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Stor age Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er at ing Tem per ature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Lead Sol der ing Tem per ature [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dissaipa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
NOTES:
(1) RMA Flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow
sol der ing.
(2) Light source is an un fil tered GaAIAs LED with a peak wave length of 885 nm and a radio met
ric in ten sity level which var ies less than 10% over the en tire lens sur face of the
pho to di ode being tested.
(3) Junc tion tem pera ture main tained at 25
o
C.
(4) To cal cu late typi cal dark cur rent in nA, use. The for mual I
D
= 10
(0.042 TAt-1.5)
where T
A
is
am bi ent tem pera ture in
o
C.
(5) Der ate line arly 2.5 mw/
o
C above 25
o
C.
Description
The OP910 consists of a PIN silicon
photodiode mounted in a two-leaded
hermetic TO-46 package. The narrow
receiving angle has an acceptance half
angle of
±12
o
.
Typi cal Per form ance Curves
Typi cal Spec tral Re sponse
Wave length - nm
Optek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
3-70
(972)323- 2200
Fax (972)323-2396
OPTEK [ OPTEK TECHNOLOGIES ]
