ELECTRON DETECTION 100 mm
2
FEATURES
AXUV100G
• Ideal for electron detection
• Large detection area
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity,
R
Shunt Resistance, Rsh
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature
1
1
2
TEST CONDITIONS
10mm x 10mm
@ 254nm, V
R
= 0V
V
B
= ±10mV
I
R
= 1µA
V
R
= 0V
V
R
= 0V, R
L
= 50½
MIN
0.07
20
TYP
100
0.08
10
10
MAX
0.09
UNITS
mm
2
A/W
M-ohm
Volts
44
10
nF
usec
-10° TO 40°C
2
-20°C TO 80°C
70°C
260°C
0.08" from case for 10 seconds.
Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors”
prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
OPTODIODE [ OPTODIODE CORP ]
