PHOTODIODE 16 ELEMENT
AXUV16ELG
FEATURES
• 40 pin dual in-line package
• Ideal for electron detection
• 100% internal QE
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (Per Element)
PARAMETERS
Active Area
Responsivity,
R
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Shunt Resistance (per element)
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead soldering temperature
2
1
TEST CONDITIONS
2mm x 5mm
(see graphs on next page)
I
R
= 1µA
V
R
= 0V
V
R
= 0V
V
f
= ±10mV
MIN
TYP
10
25
MAX
UNITS
mm
2
A/W
Volts
40
500
100
pF
nsec
MOhms
-10° TO 40°C
1
-20°C TO 80°C
70°C
260°C
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
0.080" from case for 10 seconds.
2
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
OPTODIODE [ OPTODIODE CORP ]
