PHOTODIODE 63 mm
2
AXUV63HS1-CH
FEATURES
•
•
•
•
•
Circular active area
Ideal for electron detection
100% internal QE
High speed
Hole in center of detector
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity,
R
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Dark Current
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
2
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature
1
1
2
TEST CONDITIONS
Ø9mm
(see graphs on next page)
I
R
= 1µA
V
R
= 0V
V
R
= 150V, R
L
= 50
V
R
= 150V
MIN
TYP
63
MAX
UNITS
mm
2
A/W
Volts
160
10
2
100
nF
nsec
nA
-10° TO 40°C
-20°C TO 80°C
70°C
260°C
0.08" from case for 10 seconds.
Temperatures exceeding these parameters may create Oxide growth on the active area.
Over time Responsivity to Low energy radiation and wavelengths below 150nm will Be Compromised.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
OPTODIODE [ OPTODIODE CORP ]
