SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES
• Ultra high optical output
• Four wire bonds on die corners
• Very narrow optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size: 0.026 x 0.026
OD-110L
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins
must be
externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
TEST CONDITIONS
I
F
= 500mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
R
= 10μA
MIN
55
TYP
110
850
40
7
1.7
5
30
20
20
2
MAX
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
I
F
= 500mA
I
FP
= 50mA
I
FP
= 50mA
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Continuous Forward Current
Reverse Voltage
1
1000mW
500mA
1.5A
5V
Peak Forward Current (10μs, 200Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
Derate per Thermal Derating Curve above 25°C
linearly above 25°C
2
Derate
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
Thermal Resistance, R
THJA
2
-40°C to 100°C
150°C/W Typical
60°C/W Typical
100°C
1
2
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
OPTODIODE [ OPTODIODE CORP ]
