HIGH-POWER GaAlAs IR EMITTERS
FEATURES
ANODE
(CASE)
OD-148W
GLASS
.006 HIGH
MAX
.015
1.00
MIN.
• Open center of emission
.209
.220
• High reliability liquid-phase epitaxially grown GaAlAs
• Hermetically sealed TO-46 package
• OD-148-C chip used
.183 .152
.187 .156
.017
.088
.102
.143
.150
.100
.041
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
CATHODE
.036
45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
8
TYP
10
880
80
95
30
17
MAX
UNITS
mW
nm
nm
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
5
1.55
1.9
Volts
Volts
pF
sec
sec
Deg
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Power Dissipation
1
190mW
100mA
5V
3A
Peak Forward Current (10 s, 400Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
-55°C TO 100°C
400°C/W Typical
135°C/W Typical
100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Thermal Resistance, R
THJA2
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
