OD-24X24-C 参数 Datasheet PDF下载

HIGH-POWER GaAlAs EMITTER CHIPS

.024

.005

.006 D

2 PLACES

OD-24x24-C

FEATURES

• High current capability

• 2 bond pads for uniform output

.024

• Gold contacts for high reliability bonding

• High reliability LPE GaAlAs IRLED chips

All dimensions are nominal values in inches unless

otherwise specified.

EMITTING

SURFACE

.005

.006

N

P

.006

.003

.005

RoHS

GOLD

CONTACTS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

o

TEST CONDITIONS

I

F

= 100mA

I

F

= 50mA

I

F

= 200mA

I

R

= 10 A

V

R

= 0V

5

MIN

7

TYP

10

880

1.6

30

60

80

MAX

UNITS

mW

nm

nm

Peak Emission Wavelength,

P

Spectral Bandwidth at 50%,

Forward Voltage, V

F

Capacitance, C

Rise Time

Fall Time

Reverse Breakdown Voltage, V

R

2

Volts

Volts

pF

sec

sec

0.7

0.7

ABSOLUTE MAXIMUM RATINGS AT 25°C

Power Dissipation

Continuous Forward Current

Reverse Voltage

400mW

200mA

5V

7A

Peak Forward Current (10 s, 300 Hz)

Storage and Operating Temperature Range

Maximum Junction Temperature

-65°C to 150°C

150°C

The exact performance data depends on your package configuration and technique. Data listed in this specification is

for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days

from the shipment date. Opto Diode must be notified of any discrepancies within this period.

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com