HIGH-POWER GaAlAs IR EMITTERS
FEATURES
• High optical output
• 850nm peak emission
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
OD-850F
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
TEST CONDITIONS
I
F
= 100mA
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
R
= 10μA
MIN
22
TYP
30
850
40
8
1.6
5
30
20
20
2
MAX
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
I
F
= 100mA
I
FP
= 50mA
I
FP
= 50mA
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Reverse Voltage
1
200mW
100mA
300mA
260°C
5V
Peak Forward Current (10μs, 200Hz)
1
Lead Soldering Temperature (1/16" from case for 10sec)
Derate linearly above 25°C.
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
Thermal Resistance, R
THJA
2
-40°C to 100°C
400°C/W Typical
135°C/W Typical
100°C
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads.
circulating at a rapid rate to keep case temperature at 25°C.
2
Air
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
OPTODIODE [ OPTODIODE CORP ]
