HIGH-SPEED GaAlAs IR EMITTERS
OD-870W
FEATURES
• High reliability LPE grown GaAlAs
• High power output
• Fast response
• Wide range of linear power output
• Custom packages available
• Custom spectral emissions available from
780nm -870nm
GLASS
.006 HIGH
MAX
1.00
MIN.
.015
ANODE
(CASE)
.209
.220
.183 .152
.187 .156
.017
.098
.112
.143
.150
.100
.041
CATHODE
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
4.5
TYP
5.5
870
50
80
5
MAX
UNITS
mW
nm
nm
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
2
1.5
150
15
15
1.8
Volts
Volts
nsec
nsec
pF
Deg
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Power Dissipation
1
180mW
100mA
2V
3A
Peak Forward Current (10 s, 200Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2
Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
-55°C TO 100°C
400°C/W Typical
135°C/W Typical
100°C
Thermal Resistance, R
THJA
2
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
