OD-880-C 参数 Datasheet PDF下载

HIGH-POWER GaAlAs IR EMITTER CHIPS

FEATURES

OD-880-C

.014

• High reliability LPE GaAlAs IRLED chips

• Graded-bandgap LED structure for high radiant power

output

.014

• 880nm peak emission

• Good bondability

• Good ohmic contacts (gold alloys)

EMITTING

SURFACE

.006

N

P

.003

.005

All dimensions are nominal values in inches unless

otherwise specified.

GOLD

CONTACTS

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

o

Peak Emission Wavelength,

P

Spectral Bandwidth at 50%,

Forward Voltage, V

F

Capacitance, C

Rise Time

Fall Time

Reverse Breakdown Voltage, V

R

TEST CONDITIONS

I

F

= 100mA

I

F

= 20mA

I

F

= 50mA

I

F

= 100mA

I

R

= 10 A

V

R

= 0V

5

MIN

8

TYP

14

2

880

80

30

17

MAX

UNITS

mW

nm

1.9

Volts

Volts

pF

sec

sec

nm

1.55

0.5

0.5

ABSOLUTE MAXIMUM RATINGS AT 25°C

Power Dissipation

Continuous Forward Current

Reverse Voltage

190mW

100mA

5V

3A

Peak Forward Current (10 s, 300 Hz)

Storage and Operating Temperature Range

Maximum Junction Temperature

-65°C to 150°C

150°C

The exact performance data depends on your package configuration and technique. Data listed in this specification is

for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days

from the shipment date. Opto Diode must be notified of any discrepancies within this period.

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com