HIGH-POWER GaAlAs IR EMITTERS
OD-880L
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power
density
1.00
MIN.
GLASS
DOME
.015
ANODE
(CASE)
.209
.220
.183 .152
.186 .156
.017
.024
.043
.143
.150
.100
.041
CATHODE
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
Total Power Output, P
o
PARAMETERS
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
18
TYP
20
50
80
35
30
17
MAX
UNITS
mW/sr
nm
nm
mW
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Radiant Intensity, I
e
880
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
5
1.55
1.9
Volts
Volts
pF
sec
sec
Deg
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Power Dissipation
1
190mW
100mA
5V
3A
Peak Forward Current (10 s, 400Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1
Derate per Thermal Derating Curve above 25°C
2
Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
-55°C TO 100°C
400°C/W Typical
135°C/W Typical
100°C
Thermal Resistance, R
THJA
2
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
