HIGH-POWER GaAlAs IR EMITTERS
FEATURES
EPOXY
DOME
.125
MAX
ANODE
(CASE)
OD-880
.042
.046
.017
.209
.212
• Very high power output
• Wide angle of emission
• TO-46 Header
• High reliability liquid-phase epitaxially grown GaAlAs
.164
.167
.100
.041
All metal surfaces are gold plated. Dimensions are
nominal values in inches unless otherwise specified.
.009
.012
1.00
MIN
CATHODE
.036
45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
25
TYP
30
880
80
80
30
17
MAX
UNITS
mW
nm
nm
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
5
1.55
1.9
Volts
Volts
pF
sec
sec
Deg
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Continuous Forward Current
Reverse Voltage
190mW
100mA
5V
3A
Peak Forward Current (10 s, 400Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1
Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
Thermal Resistance, R
THJA2
-55°C TO 100°C
400°C/W Typical
135°C/W Typical
100°C
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
