SUPER HIGH-POWER GaAlAs IR EMITTERS
.130
MAX
EPOXY
.039
.048
.018
OD-100
FEATURES
ANODE
(CASE)
.357
.362
.100
•
•
•
•
•
Ultra high power output
Four wire bonds on die corners
Very uniform optical beam
Standard 3-lead TO-39 hermetic package
Chip size .030 x .030 inches
.031
.014
.018
.500
CATHODE
.040
45*
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
I
F
= 500mA
I
F
= 10A
I
F
= 500mA
I
F
= 50mA
MB
E
MIN
80
TYP
100
1300
60
80
110
1.65
5
30
90
0.7
0.7
880
1000 mW
500mA
10A
5V
260°C
-55°C to 100°C
100°C
145°C/W Typical
75°C/W Typical
R
MAX
UNITS
mW
mW/sr
nm
nm
Deg
2
Volts
Volts
pF
μsec
μsec
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
RoHS
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Peak Forward Current (10μs, 400Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
EN
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
OF
Continuous Forward Current
LI
FE
DE
I
F
= 500mA
I
R
= 10μA
V
R
= 0V
CE
20
13
.297
.302
.200
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins
must be
externally connected together.
OPTODIODE [ OPTODIODE CORP ]
