NIR/RED ENHANCED 5 mm
2
PHOTODIODE-PREAMPLIFIER
.085
+V
V
out
CASE
.370
358
–V
.028
(.012 MAX)
.163
RoHS
ODA-5W-100K
.050 MIN
FEATURES
• Large active area
• Low noise
• High sensitivity
.078
( .325)
.016
019
.031
.035
GND
( .200 PIN CTRS)
• Custom gains available
• Hermetically sealed TO-39
SHOWN WITH CAP REMOVED FOR CLARITY
R1
C1
3
IN
D1
+V
0.1 ufd
–
U1
4
2
IN +
1
V OUT
–V
0.1 ufd
ELECTRO-OPTICAL CHARACTERISTICS AT 23°C
PARAMETERS
Dark Offset
TEST CONDITIONS
V
s
= ± 15 V
V
s
= ± 15
V
s
= ± 15
V
s
= ± 15
MIN
TYP
477
Dark Offset Noise
Sensitivity
Frequency Response (-3 db)
NEP
± 1.0
1000
MAX
UNITS
µV rms
V/mW
kHz
pW/√Hz
mV
BW = 0.1 to 800 kHz
λ = 940 nm
λ = 940 nm
λ = 940 nm
V
s
= ± 15 V
55
500
63
800
6.76
100
6.2
7.5
Transimpedence Gain
Supply Current
mA
kΩ
THERMAL PARAMETERS
Voltage Supplies
Power Dissipation
± 5 to ± 15V
–25° to +100° C
+260° C
225 mW
Storage and Operating Temperature
Soldering Temperature (1/16" from case for 3 secconds max)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com