PHOTODIODE Ø5 mm
FEATURES
•
•
•
•
•
SXUV20HS1
Circular active area
Ideal for EUV detection
100% internal QE
High speed
Grid lines 5 microns,
Pitch 100 microns
• RoHS and REACH compliant
RoHS
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity,
R
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Dark Current
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
1
Nitrogen or Vacuum
Lead Soldering Temperature
2
1
TEST CONDITIONS
Ø5.01mm
(see graphs on next page)
I
R
= 1µA
V
R
= 0V
RL = 50 , V
R
= 150V
V
R
= 150V
MIN
TYP
19.7
MAX
UNITS
mm
2
A/W
Volts
160
200
800
2
100
pF
nsec
nA
-10° TO 40°C
1
-20°C TO 80°C
260°C
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
0.080" from case for 10 seconds.
2
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision July 1, 2013
OPTODIODE [ OPTODIODE CORP ]
