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Operating Region and Power Dissipation
Maximum power dissipation of the RS7302 depends on the thermal resistance of the case and circuit board, the temperature
difference between the die junction and ambient air, and the rate of airflow. The power dissipation across the devices is
P=I
OUT
x (V
IN
‐V
OUT
). The resulting maximum power dissipation is:
P
MAX
=
(
T
J
−
T
A
) (
T
J
−
T
A
)
=
θ
JC
+
θ
CA
θ
JA
Where (T
J
‐T
A
) is the temperature difference between the RS7301 die junction and the surrounding air,
θ
JC
is the thermal
resistance of the package chosen, and
θ
CA
is the thermal resistance through the printed circuit board, copper traces and
other materials to the surrounding air. For better heat‐sinking, the copper area should be equally shared between the V
IN
,
V
OUT
, and GND pins.
Dropout Voltage
A regulator’s minimum input‐output voltage differential, or dropout voltage, determines the lowest usable supply voltage. In
battery‐powered systems, this will determine the useful end‐of‐life battery voltage. The RS7302 use a P‐channel MOSFET
pass transistor, its dropout voltage is a function of drain‐to‐source on‐resistance R
DS(ON)
multiplied by the load current.
V
DROPOUT
=
V
IN
−
V
OUT
=
R
DS
(
ON
)
×
I
OUT
DS‐RS7302‐02
September, 2009
www.Orister.com
ORISTER [ ORISTER CORPORATION ]
