RED
1.
2.
2.1
2.2
Item No.: 102205
This specification applies to GaAsP / GaAs LED Chips
Structure
Planar structure
Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
120
p-Diffusion
Isolator
n-Epitaxy GaAsP
300
n-Substrate GaAs
260
300
n-Electrode
300
120
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse voltage
Luminous intensity *
Symbol
V
F
V
R
I
V
Conditions
I
F
= 10 mA
I
R
= 10 A
I
F
= 10 mA
min
5
250
typ
1,65
400
max
1,84
Unit
V
V
cd
nm
Peak wavelength
λ
P
I
F
= 10 mA
660
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with wire bond side on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
