FM220-M thru FM2100-M
SILICON EPITAXIAL PLANCE TYPE
RATING AND CHARACTERISTICS CURVES FM220-M THRU FM2100-M
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
2.4
2.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
FM
22
0-
FM
M~
25
FM
0-
24
M
0-
~F
M
FM
M
26
28
0-
0-
M
M
~F
M
21
00
-M
Tj=25 C
Pulse Width 300us
1% Duty Cycle
1.6
0
22
FM
25
FM
0-
1.2
0.8
0.4
0
0
20
40
60
80
10
3.0
1.0
2
FM
M~
0-
10
M
100
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
-M
40
M2
~F
-M
120
140
160
180
200
0.1
PEAK FORWARD SURGE CURRENT,(A)
40
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLTAGE,(V)
20
10
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700
600
500
400
300
200
100
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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