HSM101 thru HSM107
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
DO-213AB / MELF
SOLDERABLE ENDS
D1= 0.105(2.67)
0.095(2.41)
CATHODE BAND
D2
0.022(0.559)
0.016(0.406)
0.205(5.20)
0.185(4.70)
D2=D1 +0
-0.008(0.20)
Dimension in inches (millimeters )
FEATURES
Ldeal for surface mounted applications
Easy pick and place
Low leakage current
Glass passivated chips
Fast switching
Metallurgically bonded construction
High temperature soldering guaranteed
250
o
C/10 seconds/.375 , (9.5mm) lead lengths
MECHANICAL DATA
Molded plastic use UL94V-0 recoqnized
flame retardant epoxy
Terminals Plated terminals, solderable per
MIL-STD-202, Method208
Polarity Red Color band on body denotes cathode
Mounting position Any
Weight 0.12gram
Case
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temp. unless otherwise specified
Single phase, half sine wave, 60Hz, resistive or inductive load
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current.375
lead length @T
T
=55
0
C
, (9.5mm)
V
RRM
V
RMS
V
DC
I
(AV)
HSM
101
HSM
102
HSM
103
HSM
104
HSM
105
HSM
106
HSM
107
UNITS
Volts
Volts
Volts
Amps
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Peak Forward Surge Current ,8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current T
A
=25
0
C
at Rated DC Blocking Voltage T
A
=100
0
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Junction Capacitanc
I
FSM
V
F
I
R
T
RR
C
J
R
R
JA
JC
30
1.0
1.3
5.0
100
50
20
60
18
75
15
1.7
Amps
Volts
A
nS
pF
0
C/W
0
Operating Temperature Range T
J
Storage Temperature Range T
STG
T
J
T
STG
-65 to +125
-65 to +150
C
C
0
NOTES
1. Reverse Recovery Test Conditions I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C
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