Dual High-Efficiency PWM Step-Down DC-DC Coverter
PAM2306
Electrical Characteristic
T
A
=25
O
C, V
IN
=3.6V, V
O
=1.8V, C
IN
=10μF, C
O
=10μF, L=2.2μH, unless otherwise noted.
PARAMETER
Input Voltage Range
Regulated Feedback Voltage
Reference Voltage Line Regulation
Regulated Output Voltage Accuary
Peak Inductor Current
Output Voltage Line Regulation
Output Voltage Load Regulation
Quiescent Current (per channel)
Shutdown Current (per channel)
Oscillator Frequency
Drain-Source On-State Resistance
SW Leakage Current (per channel)
High Efficiency
EN Threshold High
EN Threshold Low
EN Leakage Current
Over Temperature Protection
OTP
Hysteresis
SYMBOL
V
IN
V
FB
ΔV
FB
V
O
I
PK
LNR
LDR
I
Q
I
SD
f
OS C
R
DS(ON)
I
LSW
η
V
EH
V
E L
I
EN
OTP
OTH
±0.01
150
30
1.5
0.3
I
O
= 100mA
V
IN
=3V,V
FB
= 0.5V or V
O
=90%
V
IN
= 2.5V to 5V, I
O
=10mA
I
O
=1mA to 1A
No load
V
EN
= 0V
V
O
= 100%
V
FB
= 0V or V
O
= 0V
I
DS
=100mA
P MOSFET
N MOSFET
1.2
-3
1.5
0.2
0.5
40
0.1
1.5
500
0.3
0.35
±0.01
96
0.45
0.5
1
0.5
1.5
70
1
1.8
Test Conditions
MIN
2.5
0.588
0.6
0.3
+3
TYP
MAX
5.5
0.612
UNITS
V
V
%/V
%
A
%/V
%
μA
μA
MHz
kHz
Ω
Ω
μA
%
V
V
μA
°C
°C
Power Analog Microelectronics
,
Inc
www.poweranalog.com
5
07/2008 Rev 1.0
PAM [ POWER ANALOG MICOELECTRONICS ]
