Transistor
P
C
— Ta
1.2
–100
Ta=25˚C
–90
1.0
I
B
=–1.0mA
2SA1858
I
C
— V
CE
–120
V
CE
=–10V
–100
25˚C
Ta=75˚C
–80
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(mA)
–0.9mA
–70
–60
–50
–40
–30
–0.3mA
–20
–0.2mA
–10
–0.1mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
0.8
0.6
Collector current I
C
(mA)
–80
–60
0.4
–40
0.2
–20
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
25˚C
Ta=75˚C
I
C
/I
B
=10
300
h
FE
— I
C
120
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
250
Transition frequency f
T
(MHz)
–10
–30
–100
100
200
Ta=75˚C
150
25˚C
100
–25˚C
80
60
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
40
–25˚C
50
20
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
20
10000
I
E
=0
f=1MHz
Ta=25˚C
3000
1000
I
CEO
— Ta
V
CE
=–120V
Collector output capacitance C
ob
(pF)
18
16
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
–3
–10
–30
–100
14
12
10
8
6
300
100
30
10
4
2
0
–1
3
1
0
40
80
120
160
200
240
Collector to base voltage V
CB
(V)
Ambient temperature Ta (˚C)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
