Transistor
2SB970
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
s
Features
q
q
2.8
–0.3
0.65±0.15
+0.2
1.5
–0.05
+0.25
0.65±0.15
1.9±0.2
0.95
Low collector to emitter saturation voltage V
CE(sat)
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
–0.05
1
+0.2
3
0.4
–0.05
+0.1
2
1.1
–0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–15
–10
–7
–1
– 0.5
200
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
1R
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –0.4A, I
B
= –8mA
I
C
= –0.4A, I
B
= –8mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–15
–10
–7
130
60
– 0.16
– 0.8
130
22
*2
min
typ
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
max
–100
0.16
–0.06
+0.2
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
1.45
Unit
nA
V
V
V
350
– 0.3
–1.2
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
130 ~ 220
1RR
S
180 ~ 350
1RS
Marking Symbol
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
