Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0
+0.5
–0.1
Unit: mm
3.2
±0.2
■
Features
•
High collector-base voltage (Emitter open) V
CBO
•
High collector-emitter voltage (Base open) V
CEO
•
Large collector power dissipation P
C
•
Low collector-emitter saturation voltage V
CE(sat)
φ
3.16
±0.1
3.8
±0.3
11.0
±0.5
1.9
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−400
−400
−5
−100
−200
1.2
150
−55
to
+150
Unit
V
V
V
1
2
3
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
1.76
±0.1
mA
mA
W
°C
°C
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emiter open)
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −100 µA,
I
E
=
0
I
C
= −500 µA,
I
B
=
0
I
E
= −100 µA,
I
C
=
0
V
CE
= −5
V, I
C
= −30
mA
I
C
= −50
mA, I
B
= −5
mA
I
C
= −50
mA, I
B
= −5
mA
V
CB
= −30
V, I
E
=
20 mA, f
=
200 MHz
V
CB
= −30
V, I
E
=
0, f
=
1 MHz
70
9
Min
−400
−400
−5
30
−2.5
−1.5
Typ
Max
Unit
V
V
V
V
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
16.0
±1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
Publication date: March 2003
SJD00036BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
