2SB1176
P
C
T
a
20
−8
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
−7
I
B
=–120mA
T
C
=25˚C
V
CE(sat)
I
C
I
C
/I
B
=20
Collector power dissipation P
C
(W)
–100mA
Collector current I
C
(A)
15
−6
−5
−4
−3
–80mA
–60mA
–40mA
–30mA
–20mA
−10
10
(1)
−1
25˚C
T
C
=100˚C
–25˚C
5
−2
–10mA
−
0.1
(2)
0
0
40
80
120
160
−1
–3mA
0
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
−100
I
C
/I
B
=20
h
FE
I
C
10
4
f
T
I
C
V
CE
=–2V
10
4
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base-emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
−10
10
3
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
−10
10
3
25˚C
−1
T
C
=–25˚C
100˚C
10
2
–25˚C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
V
CB
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
I
E
=0
f=1MHz
T
C
=25˚C
t
on
, t
stg
, t
f
I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
Collector current I
C
(A)
10
3
10
−10
I
CP
I
C
t=1ms
t=10ms
t=300ms
10
2
1
t
stg
t
on
−1
10
0.1
t
f
−
0.1
1
−
0.1
−1
−10
−100
0.01
0
−
0.8
−1.6
−2.4
−3.2
−
0.01
−1
−10
−100
−1
000
Collector-base voltage V
CB
(V)
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2
SJD00052AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
