Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
2.8
–0.3
+0.2
Unit: mm
s
Features
q
q
0.65±0.15
+0.25
1.5
–0.05
0.65±0.15
0.95
+0.2
1.1
–0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–45
–45
–7
–200
–100
200
150
–55 ~ +150
V
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–45
–45
–7
160
– 0.3
80
2.7
460
– 0.5
V
MHz
pF
min
typ
max
– 0.1
–100
Unit
µA
µA
V
V
V
*1
h
FE
Rank classification
Rank
h
FE
Q
160 ~ 260
BQ
R
210 ~ 340
BR
S
290 ~ 460
BS
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
Parameter
Symbol
Ratings
Unit
0.16
–0.06
s
2
Absolute Maximum Ratings
(Ta=25˚C)
+0.1
0.4
–0.05
High foward current transfer ratio h
FE
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
–0.05
1
1.9±0.2
+0.2
3
+0.1
1.45
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
