Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD874 and 2SD874A
Unit: mm
s
Features
q
q
2.6±0.1
0.4max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB766
2SB766A
2SB766
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
45°
1.0
–0.2
+0.1
Symbol
V
CBO
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
emitter voltage 2SB766A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
marking
Marking symbol :
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
A
(2SB766)
B
(2SB766A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB766
2SB766A
2SB766
2SB766A
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –500mA
*2
V
CE
= –5V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
50
– 0.2
– 0.85
200
20
*2
min
typ
max
– 0.1
Unit
µA
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
Rank classification
340
– 0.4
–1.2
MHz
30
pF
Pulse measurement
Rank
h
FE1
Marking
Symbol
2SB766
2SB766A
Q
85 ~ 170
AQ
BQ
R
120 ~ 240
AR
BR
S
170 ~ 340
AS
BS
2.5±0.1
+0.25
Large collector power dissipation P
C
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
4.5±0.1
1.6±0.2
1.5±0.1
V
V
V
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
