Power Transistors
2SB0945
(2SB945)
Silicon PNP epitaxial planar type
For power switching
0.7
±0.1
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
Complementary to 2SD1270
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
Full-pack package which can be installed to the heat sink with one screw.
16.7
±0.3
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
−130
−80
−7
−5
−10
40
2
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
14.0
±0.5
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
−10
mA, I
B
= 0
V
CB
= −100
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −2
A
I
C
= −4
A, I
B
= −
0.2 A
I
C
= −4
A, I
B
= −
0.2 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −2
A, I
B1
= −
0.2 A, I
B2
=
0.2 A
V
CC
= −50
V
30
0.13
0.50
0.13
45
60
260
−
0.5
−1.5
V
V
MHz
µs
µs
µs
Min
−80
−10
−50
Typ
Max
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
60 to 120
Q
90 to 180
P
130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00024BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
