2SB953 参数 Datasheet PDF下载

Power Transistors

2SB0953

(2SB953)

, 2SB0953A

(2SB953A)

Silicon PNP epitaxial planar type

For low-voltage switching

Unit: mm

0.7

±0.1

■

Features

•

Low collector-emitter saturation voltage V

CE(sat)

•

High-speed switching

•

Full-pack package which can be installed to the heat sink with one screw

10.0

±0.2

5.5

±0.2

4.2

±0.2

4.2

±0.2

2.7

±0.2

7.5

±0.2

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB0953

2SB0953A

V

CEO

V

EBO

I

C

I

CP

P

C

T

a

=

25°C

T

j

T

stg

Symbol

V

CBO

Rating

−40

−50

−20

−40

−5

−7

−12

30

2

150

−55

to

+150

°C

°C

V

A

A

W

V

Unit

V

16.7

±0.3

φ

3.1

±0.1

Solder Dip

(4.0)

1.4

±0.1

1.3

±0.2

0.5

+0.2

–0.1

14.0

±0.5

0.8

±0.1

Collector-emitter voltage 2SB0953

(Base open)

2SB0953A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

2.54

±0.3

5.08

±0.5

1 2 3

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Collector-base cutoff

current (Emitter open)

2SB0953

2SB0953A

2SB0953

2SB0953A

I

EBO

h

FE1

h

FE2 *

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

Turn-on time

Storage time

Fall time

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

I

CBO

V

CB

= −40

V, I

E

=

0

V

CB

= −50

V, I

E

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −2

V, I

C

= −

0.1 A

V

CE

= −2

V, I

C

= −2

A

I

C

= −5

A, I

B

= −0.16

A

I

C

= −5

A, I

B

= −

0.16 A

V

CE

= −10

V, I

C

= −

0.5 A, f

=

10 MHz

V

CB

= −10

V, I

E

=

0, f

=

1 MHz

I

C

= −2

A, I

B1

= −66

mA, I

B2

=

66 mA

V

CC

= −20

V

150

140

0.1

0.5

0.1

45

60

260

−

0.6

−1.5

V

V

MHz

pF

µs

µs

µs

Symbol

V

CEO

Conditions

I

C

= −10

mA, I

B

=

0

Min

−20

−40

−50

−50

−50

µA



µA

Typ

Max

Unit

V

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE2

R

60 to 120

Q

90 to 180

P

130 to 260

Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00032BED

1