Power Transistors
2SB0968
(2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
■
Features
•
Possible to solder radiation fin directly to printed circuit board
•
High collector-emitter voltage (Base open) V
CEO
•
Large collector power dissipation P
C
6.5
±0.1
5.3
±0.1
4.35
±0.1
2.3
±0.1
0.5
±0.1
Unit: mm
7.3
±0.1
1.8
±0.1
0.8 max.
2.5
±0.1
2
1
4.6
±0.1
3
0.75
±0.1
2.3
±0.1
1.0
±0.1
0.1
±0.05
0.5
±0.1
(5.3)
(4.35)
(3.0)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation (T
C
=
25°C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−50
−40
−5
−1.5
−3
10
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
1
(1.8)
2
3
1.0
±0.2
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −1
mA, I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
A
V
CE
= −5
V, I
C
= −1
mA
I
C
= −1.5
A, I
B
= −
0.15 A
I
C
= −2
A, I
B
= −
0.2 A
V
CE
= −5
V, I
C
= −
0.5 A, f
=
200 MHz
V
CB
= −20
V, I
E
=
0, f
=
1 MHz
150
45
80
10
−1
−1.5
V
V
MHz
pF
Min
−50
−40
−1
−100
−10
220
Typ
Max
Unit
V
V
µA
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
(5.5)
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
