Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
Unit: mm
s
Features
q
q
q
2.9
–0.05
Parameter
Collector to
base voltage
Collector to
2SA1034
2SA1035
2SA1034
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–35
–55
–35
–55
–5
–100
–50
200
150
–55 ~ +150
Unit
+0.2
1.1
–0.1
2
emitter voltage 2SA1035
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :
F
(2SA1034)
H
(2SA1035)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
FE1
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
*2
V
CE
= –1V, I
C
= –100mA
*2
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
*2
min
typ
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
V
max
–100
–1
0.16
–0.06
+0.1
0.4
–0.05
+0.1
s
Absolute Maximum Ratings
1.9±0.2
Low noise voltage NV.
High foward current transfer ratio h
FE
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25˚C)
2.8
–0.3
0.65±0.15
+0.2
1.5
–0.05
+0.25
0.65±0.15
0.95
1
+0.2
0.95
3
1.45
Unit
nA
µA
V
2SA1034
2SA1035
2SA1034
2SA1035
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE
f
T
NV
–35
–55
–35
–55
–5
180
– 0.7
200
700
– 0.6
–1.0
V
V
V
V
MHz
150
mV
Rank classification
Rank
h
FE
R
180 ~ 360
2SA1034
2SA1035
FR
HR
S
260 ~ 520
FS
HS
T
360 ~ 700
FT
HT
Pulse measurement
Marking
Symbol
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
